pa2423mb SiGe Semiconductor, pa2423mb Datasheet - Page 8

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pa2423mb

Manufacturer Part Number
pa2423mb
Description
2.4 Ghz Bluetooth Class 1 Power Amplifier Ic
Manufacturer
SiGe Semiconductor
Datasheet

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MSOP 8 PCB Footprint Layout
Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423MB. The
order part number is PA2423MB-EV. The evaluation board is intended to simplify the testing with respect to
RF performance of this power amplifier.
The application note, 05AN005 provides the supporting information for using the evaluation board.
contains information on the schematic, bill of materials and recommended layout for the power amplifier and
the input and output matching networks. To assist in the design process, this layout is available, upon
request, in gerber file format.
In addition, a new optimized layout is available which reduces the number of components used. It achieves
this reduction by using printed inductors on the PCB. This layout is available as a gerber file to aid in a
quick design cycle. The application note, 05AN008, provides information on this space optimized layout.
Using V
V
Bluetooth
block between the radio and the antenna while consuming a modest 1uA. In transmit mode, V
pulled to VCC and PA2423MB offers 19 dB to 21dB of large signal gain. The rise and fall time are in the
order of 1-2usec.
Using V
V
Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to
DOC# 05PDS001 S Rev 9 S
RAMP
CTL
is an analog pin that is designed to control the gain of PA2423MB. Applying a voltage between 0V and
is a digital pin used to power-up and power-down the PA2423MB in Time Duplex systems such as
RAMP
CTL
tm
1.1. During receive mode, V
RAMP
voltage is pulled down, PA2423MB acts as a 25 dB isolation
07/26/2001
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
PA2423MB
RAMP
Page 8 of 10
voltage is
It

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