pa905c4r Fuji Electric holdings CO.,Ltd, pa905c4r Datasheet

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pa905c4r

Manufacturer Part Number
pa905c4r
Description
Silicon Diode Power Diodes
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PA905C4R
Manufacturer:
FUJI原装
Quantity:
20 000
CHECKED
CHECKED
DRAWN
FEB.-26-‘ 07
FEB.-26-‘ 07
FEB.-26-‘ 07
D A T E
N A M E
.
DEVICE NAME
TYPE
SPEC. NO.
APPROVED
NAME.
SPECIFICATION
SILICON DIODE
PA905C4R
MS5D3029
Fuji Electric Device Technology Co.,Ltd.
MS5D3029
.
.
.
1/12
H04-004-01c

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pa905c4r Summary of contents

Page 1

... DEVICE NAME TYPE SPEC. NO APPROVED FEB.-26-‘ 07 DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED SPECIFICATION SILICON DIODE : PA905C4R : NAME. MS5D3029 : Fuji Electric Device Technology Co.,Ltd MS5D3029 1/12 H04-004-01c ...

Page 2

Classifi- Date Ind. cation FEB.-26 - Enactment -2007 Fuji Electric Device Technology Co.,Ltd. Revised Records Applied Drawn Contents Date Issued - Date MS5D3029 Checked Approved 2/12 H04-004-02b ...

Page 3

... SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE PA905C4R 2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS (1) Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot No. (3) Molding resin Epoxy resin ...

Page 4

TEST AND INSPECTION 4.1 STANDARD TEST CONDITION Standard test condition is Ta=25℃、65%R.H. If judgment is no doubt, the test condition is possible to test in normal condition Ta=5~35℃、48~85%R.H. 4.2 STRUCTURE INSPECTION It inspect with eye and measure, Item 2 ...

Page 5

Test Test Testing methods and Conditions No. Items 1 High Temp. Temperature :Tstg max Storage Test duration : 1000h 2 Low Temp. Temperature :Tstg min Storage Test duration : 1000h 3 Temperature Temperature : 85±2°C Humidity Relative humidity : 85±5% ...

Page 6

Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the ...

Page 7

Installation ・Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Table 1: Solder temperature and duration Solder Method temperature Flow 260±5℃ Soldering ...

Page 8

This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. ・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘ ...

Page 9

Fuji Electric Device Technology Co.,Ltd. Sn-Cu dipping(Pb<1000ppm) MS5D3029 9/12 H04-004-03a ...

Page 10

Forward Characteristic Tj=125℃ 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VF Forward Voltage (V) Forward Power Dissipation(max.) 18 360° λ Io Average ...

Page 11

Current Derating (Io-Tc)(max.) 150 140 130 120 110 100 Square wave λ=60° Io Average Output Current λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection Surge ...

Page 12

Fuji Electric Device Technology Co.,Ltd. Transient Thermal Impedance (max.) Rth j-c:1.5°C Time (sec) MS5D3029 12/12 H04-004-03a ...

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