km416v4104c Samsung Semiconductor, Inc., km416v4104c Datasheet - Page 5

• Manufacturer Part Number: km416v4104c
• Description: 4m X 16bit Cmos Dynamic Ram With Extended Data Out
• Manufacturer: Samsung Semiconductor, Inc.

KM416V4004C,KM416V4104C
CAPACITANCE
AC CHARACTERISTICS
Test condition : V
Input capacitance [A0 ~ A12]
Input capacitance [RAS, UCAS, LCAS, W, OE]
Output capacitance [DQ0 - DQ15]
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
CC
=3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
(T
Parameter
A
=25 C, V
(0 C T
CC
=3.3V, f=1MHz)
A
70 C, See note 2)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RWC
RAC
CAC
AA
CLZ
CEZ
OLZ
T
RP
RAS
RSH
CSH
CAS
RCD
RAD
CRP
ASR
RAH
ASC
CAH
RAL
RCS
RCH
RRH
WCH
WP
RWL
CWL
DS
Symbol
C
C
C
IN1
IN2
DQ
Min
101
74
25
45
35
11
23
3
3
3
1
8
7
9
5
0
7
0
7
0
0
0
7
6
8
7
0
-45
Max
10K
5K
45
12
23
13
50
33
22
Min
113
84
30
50
38
11
25
3
3
3
1
8
8
9
5
0
7
0
7
0
0
0
7
7
8
7
0
Min
-
-
-
-5
Max
10K
10K
50
13
25
13
50
37
25
Min
104
138
40
60
10
40
10
14
12
10
10
30
10
10
10
10
3
3
3
1
5
0
0
0
0
0
0
-6
Max
Max
10K
10K
5
7
7
60
15
30
13
50
45
30
CMOS DRAM
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
Units
3,4,10
pF
pF
pF
Note
3,4,5
3,10
6,20
9,19
10
13
13
16
3
3
2
4
8
8