km416rd8ac Samsung Semiconductor, Inc., km416rd8ac Datasheet - Page 32

• Manufacturer Part Number: km416rd8ac
• Description: 128/144mbit Rdram 256k X 16/18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

KM416RD8AC(D)/KM418RD8AC(D)
4.0 Controller Configuration - This stage initializes the
controller block. Each step of this stage will set a field of the
ConfigRMC[63:0] bus to the appropriate value. Other
controller implementations will have similar initialization
requirements, and this stage may be used as a guide.
are written with a value halfway between their minimum
and maximum values. This shortens the time needed for
the RDRAMs to reach their steady-state current control
values in stage 5.0.
power state at this point. A broadcast PDNExit command
is performed by the SIO block to place the RDRAMs in
the RLX (relax) power state in which they are ready to
receive ROW packets.
through the SIO block. One of the operations performed
by this step is to generate a value for the AS (autoskip) bit
in the SKIP register and fix the RDRAM to a particular
read domain.
written with a value which determines the time interval
between a COL packet with a memory read command and
the Q packet with the read data on the Channel. The value
written sets RMC.d1 to the minimum value permitted for
the system. This will be adjusted later in stage 6.0.
mines the values of the t
t
ters that are present in the system. The ConfigRMC bus is
written with values that will be compatible with all
RDRAM devices that are present.
values of the t
present in the system. The ConfigRMC bus is written with
a value that will be compatible with all RDRAM devices
that are present.
mines the values of the t
parameter that are present in the system. The ConfigRMC
bus is written with value that will be compatible with all
RDRAM devices that are present.
mines the values of the t
parameter that are present in the system. The ConfigRMC
bus is written with a value that will be compatible with all
RDRAM devices that are present.
RCD,MIN
3.13 Write CCA and CCB Register - These registers
3.14 Powerdown Exit - The RDRAMs are in the PDN
3.15 SETF - Each RDRAM is given a SETF command
4.1 Initial Read Data Offsets - The configRMC bus is
4.2 Configure Row/Column Timing - This step deter-
4.3 Set Refresh Interval - This step determines the
4.4 Set Current Control Interval - This step deter-
4.5 Set Slew Rate Control Interval - This step deter-
, t
RR,MIN
REF,MAX
, and t
RDRAM timing parameter that are
RAS,MIN
PP,MIN
CCTRL,MAX
TEMP,MAX
RDRAM timing parame-
, t
RP,MIN
RDRAM timing
RDRAM timing
, t
RC,MIN
,
Page 29
5.0 RDRAM Current Control - This step causes the INIT
block to generate a sequence of pulses which performs
RDRAM maintenance operations.
6.0 RDRAM Core, Read Domain Initialization - This
stage completes the RDRAM initialization
7.0 Other RDRAM Register Fields - This stage rewrites
the INIT register with the final values of the LSR,NSR, and
PSR fields.
In essence, the controller must read all the read-only config-
uration registers of all RDRAMs (or it must read the SPD
device present on each RIMM), it must process this informa-
tion, and then it must write all the read-write registers to
place the RDRAMs into the proper operating mode.
Initialization Note [1]: During the initialization process, it is
necessary for the controller to perform 128 current control
operations (3xCAL, 1xCAL/SAM) and one temperature
calibrate operation (TCEN/TCAL) after reset or after power-
down (PDN)exit.
Initialization Note [2]: There are two classes of 64/72Mbit
RDRAM . They are distinguished by the “S28IECO” bit in
the SPD. The behavior of the RDRAM at initialization is
slightly different for the two types:
S28IECO=0: Upon powerup the device enters ATTN state.
The serial operations SETR, CLRR and SETF are performed
without requiring a SDEVID match of the SBC bit (broad-
cast) to be set.
mines the number of RDRAM bank, row, and column
address bits that are present in the system. It also deter-
mines the RDRAM core types (independent, doubled, or
split) that are present. The ConfigRMC bus is written with
a value that will be compatible with all RDRAM devices
that are present.
memory refresh transactions is performed in order to place
the cores of all RDRAMs into the proper operating state.
write and memory read transaction is performed to each
RDRAM to determine which read domain each RDRAM
occupies. The programmed delay of each RDRAM is then
adjusted so the total RDRAM read delay (propagation
delay plus programmed delay) is constant. The TPARM
and TCDLYI registers of each RDRAM are rewritten with
the appropriate read delay values. The ConfigRMC bus is
also rewritten with an updated value.
4.6 Set Bank/Row/Col Address Bits - This step deter-
6.1 RDRAM Core Initialization - A sequence of 192
6.2 RDRAM Read Domain Initialization - A memory
Rev. 1.01 Oct. 1999
Direct RDRAM
™