s-80857cny-z-g Seiko Instruments Inc., s-80857cny-z-g Datasheet - Page 18
s-80857cny-z-g
Manufacturer Part Number
s-80857cny-z-g
Description
Super-small Package High-precision Voltage Detector
Manufacturer
Seiko Instruments Inc.
Datasheet
1.S-80857CNY-Z-G.pdf
(58 pages)
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*1. −V
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
18
Detection voltage
Release voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Response time
Detection voltage
temperature
coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
2. CMOS Output Products
detection voltage range in Table 3 to 4 .)
2-1. Detection Voltage Typ.1.4 V or Less Products
DET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Item
: Actual detection voltage value, −V
∆
*2
−
∆
Ta
V
DET
*1
[
mV/
°
C
∆
]
Ta
*1
∆
Symbol
−V
+V
−
V
=
V
I
t
•
I
OUT
PLH
HYS
SS
V
DD
−
−
DET
DET
DET
V
V
DET(S)
DET
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
V
V
Output transistor,
Nch, V
Output transistor,
Pch, V
(
Typ.
DD
DD
= 1.5 V
= 2.0 V
Ta = −40 to +85 °C
) [ ]
DS
DS
V
Seiko Instruments Inc.
DET(S)
2 *
= 2.1 V, V
= 0.5 V, V
Condition
×
: Specified detection voltage value (The center value of the
∆
Table 16
Ta
∆
S-80808 to 09
S-80810 to 14
−
•
V
−
DD
DD
DET
V
DET
= 4.5 V
= 0.7 V
[
ppm/
°
−V
C
×0.98
0.802
0.910
1.017
1.125
1.232
1.340
1.448
0.018
0.028
0.037
0.047
0.056
0.066
0.076
0.65
0.04
Min.
2.9
]
DET(S)
3 *
(Ta = 25 °C unless otherwise specified)
÷
1000
−V
0.834
0.944
1.054
1.164
1.273
1.383
1.493
0.034
0.044
0.054
0.064
0.073
0.083
0.093
±100
Typ.
1.3
1.3
0.2
5.8
DET(S)
−V
×1.02
0.867
0.979
1.091
1.203
1.315
1.427
1.538
0.051
0.061
0.071
0.081
0.091
0.101
0.110
±350
Max.
3.5
3.5
5.0
60
DET(S)
ppm/
Rev.4.3
Unit
mA
mA
µA
µA
°C
µs
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
circuit
Test
_00
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
3
4
1
1
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