lp3401lt1g Leshan Radio Company, lp3401lt1g Datasheet - Page 3
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lp3401lt1g
Manufacturer Part Number
lp3401lt1g
Description
30v P-channel Enhancement-mode Mosfet
Manufacturer
Leshan Radio Company
Datasheet
1.LP3401LT1G.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LP3401LT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
120
100
25.00
20.00
15.00
10.00
80
60
40
20
190
170
150
130
110
5.00
0.00
90
70
50
30
10
0.00
0.00
0
Figure 3: On-Resistance vs. Drain Current and
Figure 5: On-Resistance vs. Gate-Source Voltage
-10V
2.00
Fig 1: On-Region Characteristics
1.00
2
-4.5V
4.00
Gate Voltage
2.00
-V
-V
4
-I
DS
V
GS
D
GS
25°C
(A)
(Volts)
(Volts)
TYPICAL ELECTRICAL CHARACTERISTICS
=-2.5V
V
6.00
V
3.00
GS
GS
6
=-4.5V
=-2V
V
-3V
I
125°C
D
-2.5V
GS
=-2A
=-10V
8.00
4.00
8
10.00
5.00
10
1.0E+01
1.0E+00
10
1.8
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
8
6
4
2
0
1
0
0
LESHAN RADIO COMPANY, LTD.
0.0
25
Figure 4: On-Resistance vs. Junction
0.5
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
0.2
I
D
=-3.5A, V
50
125°C
I
D
=-3.5A, V
1
V
Temperature (°C)
DS
Temperature
0.4
=-5V
-V
75
GS
GS
-V
1.5
(Volts)
LP3401LT1G
=-10V
GS
25°C
SD
125°C
=-4.5V
100
0.6
(Volts)
2
25°C
125
V
0.8
GS
I
D
=-1A
=-2.5V
2.5
150
1.0
175
3
1.2
3/5