ald110804 Advanced Linear Devices Inc (ALD), ald110804 Datasheet - Page 2

• Manufacturer Part Number: ald110804
• Description: Quad/dual N-channel Enhancement Mode Epad Matched Pair Mosfet Array
• Manufacturer: Advanced Linear Devices Inc (ALD)

ALD110804/ALD110904
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND
CAUTION:
Notes:
Parameter
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Input Capacitance
1
Consists of junction leakage currents
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
V
1
V
GS
DS
1
Symbol
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
G OS
R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
G FS
R DS (ON)
T A = 25 C unless otherwise specified
Min
0.38
ALD110804 / ALD110904
Advanced Linear Devices
Typ
0.40
+1.6
12.0
-1.7
500
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
10
60
2
5
3
Max
0.42
100
10
30
4
1
Unit
V
mV
mV/ C
mA
mmho
%
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
-65 C to +150 C
V/ C
mho
0 C to +70 C
500 mW
+260 C
I DS =1 A
V DS = 0.1V
V DS1 = V DS2
I D = 1 A
I D = 20 A, V DS = 0.1V
I D = 40 A
V GS = + 9.9V
V GS = + 4.2V
V DS = +5V
V GS = + 4.4V
V DS = + 9.4V
V GS =+4.4V
V DS = +9.4V
V DS = 0.1V
V GS = +4.4V
I DS = 1.0 A
V GS = -0.6V
V GS = -0.6V
V DS =10V, T A = 125 C
V DS = 0V V GS = 10V
T A =125 C
V + = 5V R L = 5K
V + = 5V R L = 5K
f = 100KHz
Test Conditions
10.6V
10.6V
2