ald110808 Advanced Linear Devices Inc (ALD), ald110808 Datasheet - Page 2

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ald110808

Manufacturer Part Number
ald110808
Description
Quad/dual N-channel Enhancement Mode Epad Matched Pair Mosfet Array
Manufacturer
Advanced Linear Devices Inc (ALD)
Datasheet

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Quantity
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Manufacturer:
Advanced Linear Devices Inc
Quantity:
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Manufacturer:
Advanced Linear Devices Inc
Quantity:
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ALD110808/ALD110808A/ALD110908/ALD110908A
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND T A = 25
CAUTION:
Notes:
Gate Threshold Voltage
Offset Voltage
V GS1 -V GS2
GateThreshold Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current1
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
V GS1 -V GS2 Tempco
Parameter
1
Consists of junction leakage currents
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
V
V
GS
DS
1
V GS(th)
V OS
∆V OS
∆V GS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
°
ALD110808A / ALD110908A ALD110808/ ALD110908
C unless otherwise specified
Min
0.78
10
Typ
0.80
12.0
500
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
1
5
3
Advanced Linear Devices
Max
+1.6
0.82
-1.7
100
0.0
30
2
4
1
Min
0.78
10
Typ
0.80
12.0
500
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
3
5
3
Max
0.82
+1.6
-1.7
100
0.0
10
30
4
1
-65°C to +150°C
Unit
mV
µV/ °C
mV/ °C
mA
mmho
%
µmho
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
V
0°C to +70°C
500 mW
+260°C
Test Condition
I DS =1µA
V DS = 0.1V
I DS =1µA
V DS1 = V DS2
I D = 1µA
I D = 20µA V DS = 0.1V
I D = 40µA
V GS = +10.3V
V GS = +4.8V
V DS = +5V
V GS = +4.8V
V DS = +9.8V
V GS =+4.8V
V DS = +9.8V
V DS = 0.1V
V GS = +4.8V
I DS = 1.0µA
V GS = -0.2V
V GS = -0.2V
V DS =10V, T A = 125°C
V DS = 0V V GS = 10V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
10.6V
10.6V
2

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