ald1107db Advanced Linear Devices Inc (ALD), ald1107db Datasheet - Page 2

• Manufacturer Part Number: ald1107db
• Description: Quad/dual P-channel Matched Pair Mosfet Array
• Manufacturer: Advanced Linear Devices Inc (ALD)

ALD1107/ALD1117
Transconductance
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature
Drift
On Drain
Current
Mismatch
Output
Conductance
Drain Source
On Resistance
Drain Source
On Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
Notes:
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
T
Parameter
GS1
A
2
-V
= 25 C unless otherwise specified
GS2
1
1
2
Consists of junction leakage currents
Sample tested parameters
2
I
R
BV
DS (OFF)
I
C
Symbol
GSS
R
V
V
TC
I
G
G
DS (ON)
ISS
DS (ON)
DS (ON)
G
T
OS
IS
OS
DSS
VT
fs
GS
DS
0.25
-0.4
-1.3
-12
Min
PA, SA, PB, SB package
DA, DB package
ALD1107
1200
0.67
-0.7
-1.3
Typ
0.5
0.5
0.1
40
10
-2
2
1
1800
Advanced Linear Devices
-1.0
Max
400
10
10
4
1
3
0.25
-0.4
-1.3
Min
-12
ALD1117
1200
0.67
-0.7
-1.3
Typ
0.5
0.5
0.1
40
10
-2
2
1
1800
-1.0
400
Max
10
10
4
1
3
mV/ C
V
mV
mA
mmho V
%
%
V
pA
nA
pA
nA
pF
Unit
mho
I
DS
I
V
V
V
V
I
V
T
V
T
DS
DS
GS
DS
DS
DS
DS
DS
A
DS
A
= -1.0 A V
= 125 C
= 125 C
-55 C to +125 C
-65 C to +150 C
= -10 A V
= -1.0 A V
= -5V I
= -5V I
= -0.1V V
= -0.1V V
= -12V V
= 0V V
Conditions
= V
0 C to +70 C
Test
DS
= -5V
DS
DS
500 mW
GS
+260 C
GS
GS
GS
-13.2V
-13.2V
GS
= -10mA
GS
GS
= -10mA
= -12V
= V
= 0V
= V
= 0V
= -5V
= -5V
DS
DS
2