wm8325gefl/v Wolfson Microelectronics plc, wm8325gefl/v Datasheet - Page 9

• Manufacturer Part Number: wm8325gefl/v
• Description: Processor Power Management Subsystem
• Manufacturer: Wolfson Microelectronics plc

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ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are stress ratings only. Permanent damage to the device may be caused by continuously operating at
or beyond these limits. Device functional operating limits and guaranteed performance specifications are given under Electrical
Characteristics at the test conditions specified.
Wolfson tests its package types according to IPC/JEDEC J-STD-020B for Moisture Sensitivity to determine acceptable storage
conditions prior to surface mount assembly. These levels are:
MSL1 = unlimited floor life at <30°C / 85% Relative Humidity. Not normally stored in moisture barrier bag.
MSL2 = out of bag storage for 1 year at <30°C / 60% Relative Humidity. Supplied in moisture barrier bag.
MSL3 = out of bag storage for 168 hours at <30°C / 60% Relative Humidity. Supplied in moisture barrier bag.
The WM8325 has been classified as MSL3.
RECOMMENDED OPERATING CONDITIONS
System power source
Backup Battery power source
Digital buffer supply
OTP Programming Supply
(see note)
Ground
Note:
The OTP Programming Supply PROGVDD should only be present when programming the OTP. At other times, this pin should be
left unconnected. The LDO12VOUT must be overdriven by an external supply when programming the OTP. At other times, the
voltage at this pin is driven by the internal circuits of the WM8325.
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CONDITION
OTP Programming Supply (PROGVDD)
System supply (PVDD1, PVDD2, PVDD3)
Input voltage for LDO regulators
Input voltage for DC-DC converters
Digital buffer supply (DBVDD1, DBVDD2)
Voltage range for digital inputs
Operating Temperature Range, T
Junction Temperature, T
Thermal Impedance Junction to Ambient, θ
Storage temperature prior to soldering
Storage temperature after soldering
Soldering temperature (10 seconds)
Note: These ratings assume that all ground pins are at 0V.
PARAMETER
ESD Sensitive Device. This device is manufactured on a CMOS process. It is therefore generically susceptible to
damage from excessive static voltages. Proper ESD precautions must be taken during handling and storage of
this device.
J
A
DBVDD1, DBVDD2
PROGVDD
LDO12VOUT
Exposed Ground Paddle
(EGP), DC1GND, DC2GND,
DC3GND, DC4GND,
XOSCGND
PVDD1, PVDD2, PVDD3
BACKUPVDD
JA
SYMBOL
1.71
6.25
MIN
2.7
-40°C
-40°C
-65°C
-0.3V
-0.3V
-0.3V
-0.3V
-0.3V
-0.3V
MIN
TYP
6.5
3.3
0
30
Product Brief, February 2011, Rev 1.4
o
C max / 60% RH max
MAX
6.75
5.5
3.6
3.6
DBVDD + 0.3V
24°C/W
+125°C
+150°C
+260°C
+85°C
MAX
7.0V
7.0V
7.0V
7.0V
4.5V
UNITS
WM8325
V
V
V
V
V
V
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