2sa1188etz-e Renesas Electronics Corporation., 2sa1188etz-e Datasheet - Page 2

• Manufacturer Part Number: 2sa1188etz-e
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SA1188, 2SA1189
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SA1188 and 2SA1189 are grouped by h
D
250 to 500
See characteristic curves of 2SA1190 and 2SA1191.
2
2. Pulse test
E
400 to 800
Symbol
V
V
V
I
I
h
V
V
Cob
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
*
1
2SA1188
Min
–90
–90
–5
—
—
250
—
—
—
—
Symbol
V
V
V
I
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
–0.05 –0.15 —
–0.7
130
3.2
C
E
CBO
CEO
EBO
C
Max
—
—
—
–0.1
–0.1
800
–1.0
—
—
2SA1189
Min
–120 —
–120 —
–5
—
—
250
—
—
—
FE
as follows.
2SA1188
–90
–90
–5
–100
100
400
150
–55 to +150
Typ
—
—
—
—
–0.05 –0.15 V
–0.7
130
3.2
Max
—
—
—
–0.1
–0.1
800
–1.0
—
—
2SA1189
–120
–120
–5
–100
100
400
150
–55 to +150
Unit
V
V
V
V
MHz
pF
A
A
Test conditions
I
I
I
V
V
V
I
I
I
V
I
V
f = 1 MHz
C
C
E
C
C
B
C
CB
EB
CE
CE
CB
= –10 A, I
= –1 mA*
= –10 A, I
= –1 mA, R
= –2 mA*
= –10 mA,
= –10 mA
= –70 V, I
= –2 V, I
= –12 V,
= –6 V,
= –10 V, I
Unit
V
V
V
mA
mA
mW
2
C
C
2
C
C
E
E
E
BE
= 0
= 0
= 0
= 0
= 0,
=