2sa1190dtz-e Renesas Electronics Corporation., 2sa1190dtz-e Datasheet - Page 3

• Manufacturer Part Number: 2sa1190dtz-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter saturation
voltage
Gain bandwidth product
Collector output
capacitance
Noise figure
Noise voltage referred to
input
Notes: 1. The 2SC2855 and 2SC2856 are grouped by h
D
250 to 500
2. Pulse test
E
400 to 800
Symbol Min
V
V
V
I
I
h
V
V
f
Cob
NF
e
CBO
EBO
T
FE
n
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
*
1
2SC2855
90
90
5
—
—
250
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.05 0.10 —
0.7
310
3
0.15 1.5
0.2
0.7
Max Min
—
—
—
0.1
0.1
800
1.0
—
—
2.0
—
2SC2856
120
120
5
—
—
250
—
—
—
—
—
—
FE
as follows.
Typ Max Unit
—
—
—
—
—
—
0.05 0.10 V
0.7
310
3
0.15 1.5
0.2
0.7
—
—
—
0.1
0.1
800
1.0
—
—
2.0
—
V
V
V
V
MHz
pF
dB
dB
nV/ Hz V
A
A
2SC2855, 2SC2856
Test conditions
I
I
I
V
V
V
I
V
V
f = 1 MHz
V
R
V
R
R
C
C
E
C
CB
EB
CE
CE
CB
CE
CE
CE
g
g
g
= 10 A, I
= 10 A, I
= 1 mA, R
= 10 mA, I
= 10 k , f = 1 kHz
= 10 k , f = 10 Hz
= 0, f = 1 kHz
= 70 V, I
= 2 V, I
= 12 V, I
= 6 V, I
= 10 V, I
= 6 V, I
= 6 V, I
= 6 V, I
C
C
C
C
C
C
E
E
C
E
BE
= 0
= 10 mA
= 0.1 mA,
= 0.1 mA,
= 10 mA,
B
= 0
= 0
= 0
= 0,
= 2 mA*
= 1 mA*
=
2
2
3