2sa1194k Renesas Electronics Corporation., 2sa1194k Datasheet

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2sa1194k

Manufacturer Part Number
2sa1194k
Description
Silicon Pnp Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
Application
High gain amplifier
Outline
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
TO-126 MOD
C
= 25 C
1
2
3
Silicon PNP Epitaxial
2SA1194(K)
1. Emitter
2. Collector
3. Base
Symbol
V
V
V
I
I
P
P
Tj
Tstg
C
C(peak)
CBO
CEO
EBO
C
C
*
1
3
Rating
–60
–60
–7
–1
–2
1
8
150
–55 to +150
2
1
Unit
V
V
V
A
A
W
W
C
C

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2sa1194k Summary of contents

Page 1

Application High gain amplifier Outline TO-126 MOD Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage ...

Page 2

Electrical Characteristics (Ta = 25°C) Item Symbol Collector to emitter breakdown V (BR)CEO voltage Collector cutoff current I CBO Emitter cutoff current I EBO DC current transfer ratio h FE Collector to emitter saturation V CE(sat) voltage Base to ...

Page 3

Typical Output Characteristics –1,000 –800 –600 –400 –200 –0.01 0 –2 –4 –6 Collector to emitter Voltage V Saturation Voltage vs. Collector Current – 500 Pulse – ...

Page 4

Hitachi Code TO-126 Mod JEDEC — EIAJ — Weight (reference value) 0.67 g Unit: mm ...

Page 5

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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