2sa1647 Renesas Electronics Corporation., 2sa1647 Datasheet

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2sa1647

Manufacturer Part Number
2sa1647
Description
Silicon Power Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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<R>
Document No. D14839EJ5V0DS00 (5th edition)
Date Published June 2006 NS CP(K)
Printed in Japan
DESCRIPTION
switching and features a very low collector-to-emitter saturation
voltage.
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
• Low collector saturation voltage:
• Fast switching speed:
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (Tc = 25°C)
Total power dissipation (T
Junction temperature
Storage temperature
hybrid IC.
V
t
f
The 2SA1647 is a mold power transistor developed for high-speed
This transistor is ideal for use in switching regulators, DC/DC
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
CE(sat)1
= 0.4
2. Printing board mounted
3. 7.5 cm
μ
= −0.3 V MAX. (I
s MAX. (I
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2
× 0.7 mm ceramic board mounted
C
= −3.0 A)
A
= 25°C)
C
= −3.0 A)
PNP SILICON EPITAXIAL TRANSISTOR
I
C(pulse)
Symbol
FOR HIGH-SPEED SWITCHING
I
V
V
V
I
C(DC)
B(DC)
T
P
P
T
CBO
CEO
EBO
The mark <R> shows major revised points.
stg
T
T
j
Note 1
A
= 25°C)
1.0
−55 to +150
Note 2
DATA SHEET
Ratings
−150
−100
−7.0
−5.0
−2.5
−10
150
18
, 2.0
Note 3
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
2SA1647,1647-Z
<R>
PACKAGE DRAWINGS (Unit: mm)
1.1 ±0.2
2.3 ±0.3
Note The depth of notch at the top of the fin is
TO-251 (MP-3)
TO-252 (MP-3Z)
1
6.5 ±0.2
5.0 ±0.2
2.3
from 0 to 0.2 mm.
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2
2.3
4
3
4
2.3 ±0.3
Note
0.5 ±0.1
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector Fin
2.3 ±0.2
2.3 ±0.2
0.5 ±0.1
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
2002

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2sa1647 Summary of contents

Page 1

... PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1647 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. ...

Page 2

... Refer to SWITCHING TIME TEST CIRCUIT. K 200 to 400 = 17 Ω Base current I waveform ≅ − TUT CC I Collector current B2 waveform ≅ Data Sheet D14839EJ5V0DS 2SA1647,1647-Z MIN. TYP. MAX. Unit −100 V −100 V μ −10 A −1.0 mA μ −10 A −1.0 mA μ −10 A 100 ...

Page 3

... CE Pulse Width PW (s) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 T = 125°C A 100 10 -0. -10 Collector Current I (V) CE Data Sheet D14839EJ5V0DS 2SA1647,1647-Z DERATING CURVE OF SAFE OPERATING AREA 50 100 150 (° 25°C C Single pulse R = 125°C/W th(j− 6.94°C/W th(j− ...

Page 4

... Collector Current I OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1000 100 10 4 −3 −10 0.005 0.01 0.1 (A) Collector to Base Voltage V = −20 A • 100 Data Sheet D14839EJ5V0DS 2SA1647,1647 Pulse test 25°C −0.1 −1 −10 ( 100 1000 (V) CB ...

Page 5

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SA1647,1647-Z Not all M8E 02. 11-1 ...

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