2sa1615 Renesas Electronics Corporation., 2sa1615 Datasheet - Page 2

• Manufacturer Part Number: 2sa1615
• Description: Pnp Silicon Epitaxial Transistor For High-speed Switching
• Manufacturer: Renesas Electronics Corporation.

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ELECTRICAL CHARACTERISTICS (T
Note Pulse test PW ≤ 350
h
PACKAGE DRAWINGS (UNIT: mm)
2
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacity
Turn-on time
Storage time
Fall time
FE
Marking
CLASSIFICATION
h
FE2
Parameter
1.1 ±0.2
Note
Note
200 to 400
1
6.5 ±0.2
5.0 ±0.2
2.3
2
L
Note
2.3
4
2SA1615
3
Note
μ
s, duty cycle ≤ 2%
Symbol
V
V
I
I
h
h
CE(sat)
BE(sat)
C
CBO
t
EBO
t
FE1
FE2
f
on
stg
t
T
ob
f
2.3 ±0.2
300 to 600
K
V
V
V
V
I
I
V
V
I
R
C
C
C
0.5 ±0.1
CB
EB
CE
CE
CE
CB
L
= −4.0 A, I
= −4.0 A, I
= −5.0 A, I
A
= 2.0 Ω, V
= −8.0 V, I
= −20 V, I
= −2.0 V, I
= −2.0 V, I
= −5.0 V, I
= −10 V, I
= 25°C)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
Data Sheet D16119EJ2V0DS
B
B
B1
CC
E
E
= −0.05 A
= −0.05 A
C
C
C
E
Conditions
= −I
= 0
= 0, f = 1.0 MHz
≅ −10 V
= 0
= −0.5 A
= −4.0 A
= 1.5 A
B2
= 0.125 A,
Note The depth of notch at the top of the fin is
2.3 ±0.3
from 0 to 0.2 mm.
MIN.
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
200
160
1 2 3
2SA1615-Z
4
TYP.
2.3 ±0.3
−0.2
−0.9
Note
180
220
300
0.5 ±0.1
80
60
2SA1615,1615-Z
2.3 ±0.2
MAX.
−0.25
−1.0
−1.0
−1.2
600
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
MHz
Unit
μ
μ
pF
ns
ns
ns
V
V
A
A