2sa1479 ON Semiconductor, 2sa1479 Datasheet - Page 2

• Manufacturer Part Number: 2sa1479
• Description: Pnp / Npn Epitaxial Planar Silicon Transistors High-definition Crt Display Video Output Applications
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
* : The 2SA1479 / 2SC3789 are classified by 10mA h FE as follws:
Package Dimensions
unit : mm (typ)
7516A-002
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
1.6
0.75
1.0
0.8
0.8
--
--
--
--
--
--
--
--
2.4
8
7
6
5
4
3
2
1
0
Rank
h FE
0
1
3.6
8.0
2
4.8
4.0
Parameter
3
Collector-to-Emitter Voltage, V CE -- V
--
1.0
2
40 to 80
C
--
I C -- V CE
4
3.3
0.7
60 to 120
--
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
6
I CBO
I EBO
h FE
f T
V CE (sat)
V BE (sat)
V (BR)CBO
V (BR)CEO
V (BR)EBO
Cob
Cre
D
Symbol
--
Rev.0 I Page 2 of 5 I www.onsemi.com
8
2SA1479
2SA1479 / 2SC3789
100 to 200
V CB =(- -)200V, I E =0A
V EB =(--)4V, I C =0A
V CE =(- -)10V, I C =(- -)10mA
V CE =(- -)30V, I C =(- -)10mA
I C =(--)20mA, I B =(- -)2mA
I C =(--)20mA, I B =(- -)2mA
I C =(--)10µA, I E =0A
I C =(- -)1mA, R BE =∞
I E =(- -)10µA, I C =0A
V CB =(- -)30V, f=1MHz
V CB =(- -)30V, f=1MHz
ITR03763
E
--
10
Conditions
160 to 320
F
8
7
6
5
4
3
2
1
0
0
Collector-to-Emitter Voltage, V CE -- V
2
min
(--)300
(--)300
(--)5
40*
I C -- V CE
4
Ratings
(3.1)2.6
(2.3)1.8
typ
70
6
max
(- -)0.1
(- -)0.1
(- -)0.6
(- -)1.0
320*
8
2SC3789
ITR03764
Unit
MHz
µA
µA
pF
pF
V
V
V
V
V
10