2sc5336-t1 Renesas Electronics Corporation., 2sc5336-t1 Datasheet - Page 2

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2sc5336-t1

Manufacturer Part Number
2sc5336-t1
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
50 to 100
RH
RH
Symbol
h
C
S
FE
I
I
re
NF
NF
80 to 160
CBO
EBO
f
21e
T
Note 2
Note 1
350 s, Duty Cycle
RF
RF
2
A
V
V
V
V
V
V
V
V
= +25 C)
CB
BE
CE
CE
CE
CE
CE
CB
Data Sheet P10938EJ2V0DS
= 10 V, I
= 1 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
125 to 250
Test Conditions
C
E
C
C
C
C
C
E
= 0 mA
= 0 mA
= 20 mA
= 20 mA
= 20 mA, f = 1 GHz
= 7 mA, f = 1 GHz
= 40 mA, f = 1 GHz
= 0 mA, f = 1 MHz
RE
RE
2%
MIN.
50
TYP.
120
6.5
1.1
1.8
0.5
12
MAX.
250
1.0
1.0
3.0
0.8
2SC5336
GHz
Unit
dB
dB
dB
pF
A
A

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