2sc5026g Panasonic Corporation of North America, 2sc5026g Datasheet
2sc5026g
Manufacturer Part Number
2sc5026g
Description
Bipolar Power Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5026G.pdf
(4 pages)
Transistors
2SC5026G
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1890G
■ Features
■ Absolute Maximum Ratings T
Note) * : Copper plate at the collector is more than 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2007
• Low collector-emitter saturation voltage V
• High collector-emitter voltage (Base open) V
• Mini Power type package, allowing downsizing of the equip-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ment and automatic insertion through the tape packing and the
magazine packing
2. * 1: Pulse measurement
Absolute maximum rating without heat sink for P
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
120 to 240
This product complies with the RoHS Directive (EU 2002/95/EC).
*
R
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
h
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
170 to 340
I
stg
FE1
FE2
C
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
= 25°C
T
ob
2
* 2
* 1
S
in area, 1.7 mm in thickness
CE(sat)
−55 to +150
CEO
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
150
CB
CE
CE
CB
CB
1.5
80
80
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 500 mA, I
= 500 mA, I
5
1
1
SJD00335AED
= 2 V, I
= 2 V, I
C
= 40 V, I
= 10 V, I
= 10 V, I
is 0.5 W
B
C
C
C
E
Conditions
Unit
E
E
E
= 0
= 100 mA
= 500 mA
°C
°C
W
= 0
= 0
B
B
V
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0, f = 1 MHz
= 50 mA
= 50 mA
■ Package
■ Marking Symbol: 2A
• Code
• Pin Name
MiniP3-F2
1: Base
2: Collector
3: Emitter
Min
120
80
80
60
5
0.15
0.85
Typ
120
10
Max
340
0.1
0.3
1.2
20
MHz
Unit
µA
pF
V
V
V
V
V
1
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2sc5026g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G ■ Features • Low collector-emitter saturation voltage V • High collector-emitter voltage (Base open) V • Mini Power type package, allowing downsizing of the equip- ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5026G 1.4 Copper plate at the collector 2 is more than area, 1.2 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a BE(sat) C 100 = 25° ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). MiniP3-F2 4.50 ±0.10 1.60 ±0. 0.40 ±0.08 1.50 ±0.10 (5°) 3.00 ±0.15 1.50 3 0.50 ±0.08 (45°) SJD00335AED 2SC5026G Unit: mm ±0.10 0.41 ±0.03 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...