2sc5012-t1 Renesas Electronics Corporation., 2sc5012-t1 Datasheet

2sc5012-t1

Manufacturer Part Number

2sc5012-t1

Description

Npn Silicon Rf Transistor

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SC5012-T1.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

2sc5012-t1-A

Manufacturer:

NEC

Quantity:

20 000

Current page: 1 of 7
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Document No. PU10504EJ01V0DS (1st edition)

(Previous No. P10400EJ2V0DS00)

Date Published July 2004 CP(K)

Printed in Japan

FEATURES

• High Gain Bandwidth Product (f

• Low Noise, High Gain

• Low Voltage Operation

• 4-pin super minimold Package

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

2SC5012

2SC5012-T1

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Remark To order evaluation samples, contact your nearby sales office.

Note Free air

Part Number

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

The unit sample quantity is 50 pcs.

Parameter

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

50 pcs (Non reel)

3 kpcs/reel

NPN EPITAXIAL SILICON RF TRANSISTOR

Quantity

= 9 GHz TYP.)

Symbol

tot

CBO

CEO

EBO

The mark

stg

Note

4-PIN SUPER MINIMOLD

= +25°C)

DATA SHEET

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

shows major revised points.

−65 to +150

Ratings

150

1.5

NPN SILICON RF TRANSISTOR

Unit

°C

Supplying Form

NEC Compound Semiconductor Devices, Ltd. 1993 , 2004

2SC5012

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