2sc5182-t2 California Eastern Laboratories, 2sc5182-t2 Datasheet - Page 16

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2sc5182-t2

Manufacturer Part Number
2sc5182-t2
Description
Surface Mount Npn Silicon High Frequency Transistor
Manufacturer
California Eastern Laboratories
Datasheet
BJT NONLINEAR MODEL PARAMETERS
NE687 SERIES
NE68718 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
VAF
VJC
IKR
ISC
IRB
MJE
CJE
VJE
CJC
NE
BR
NR
NC
RE
RB
RC
BF
NF
IKF
ISE
IS
0.415e-12
0.102e-12
8.0e-17
3.3e-15
4.0e-15
0.009
0.017
0.18
1.48
9.05
1.05
11.1
2.46
0.68
0.53
0.29
128
Q1
1.0
4.3
0.8
7.5
17
1.5
Parameters
Base
XCJC
MJC
CJS
MJS
PTF
XTB
VJS
XTF
VTF
EG
FC
XTI
KF
TF
ITF
TR
AF
L
BX
C
6.0e-12
L
1.0e-9
BEPKG
B
0.53
0.27
0.75
0.37
9.55
1.78
69.1
11.9
1.11
Q1
0
0
0
3
0
1
C
C
(1)
CBPKG
CB
Emitter
L
L
E
EX
C
L
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency: 0.05 to 5.0 GHz
Bias:
CE
C
Q1
Parameter
time
capacitance
inductance
resistance
voltage
current
C
V
L
CEPKG
Parameters
C
C
L
L
L
C
C
C
L
L
L
CE
CX
B
C
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
= 1 V to 2 V, I
Collector
C
= 1 mA to 10 mA
0.26e-12
0.19e-12
1.51e-9
1.18e-9
0.71e-9
0.063e-12
0.409e-12
0.361e-12
0.18e-9
0.18e-9
0.09e-9
68718
seconds
farads
henries
ohms
volts
amps
Units

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