2sc5501a Sanyo Semiconductor Corporation, 2sc5501a Datasheet

2sc5501a

Manufacturer Part Number

2sc5501a

Description

Npn Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5501A.pdf (5 pages)

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Ordering number : ENA1061

2SC5501A

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

* : The 2SC5501A is classified by 20mA hFE as follows :

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

•

Marking

Low-noise

High gain

High cut-off frequency : f T =7GHz typ.

Large allowable collector dissipation : P C =500mW max.

Rank

h FE

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

90 to 180

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

LN4

: NF=1.0dB typ (f=1GHz).

: ⏐S21e⏐

135 to 270

LN5

=13dB typ (f=1GHz).

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

Tstg

h FE

P C

I C

NPN Epitaxial Planar Silicon Transistor

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

SANYO Semiconductors

When mounted on ceramic substrate (250mm

V CB =10V, I E =0A

V EB =1V, I C =0A

V CE =5V, I C =20mA

2SC5501A

Conditions

✕0.8mm)

DATA SHEET

60408AB TI IM TC-00001434

min

90*

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

270*

500

150

1.0

No. A1061-1/5

Unit

μA

°C

Related parts for 2sc5501a

2sc5501a Summary of contents

Page 1

... Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain * : The 2SC5501A is classified by 20mA hFE as follows : Marking LN4 Rank 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to " ...

Page 2

... Collector-to-Base Voltage 2SC5501A Symbol Conditions =5V =20mA Cob V CB =10V, f=1MHz Cre V CB =10V, f=1MHz ⏐ S21e ⏐ =5V =20mA, f=1GHz 2 ⏐ S21e ⏐ =2V =3mA, f=1GHz ...

Page 3

... I C f=1GHz 100 IT00641 100 120 140 160 IT00643 ⏐ S ∠S ⏐ S ⏐ 2.443 162.5 ...

Page 4

... S ⏐ ⏐ S ⏐ 13.964 147.3 0.036 11.969 126.2 0.055 7.972 101.7 0.071 5.753 87.4 0.078 4.413 78 ...

Page 5

... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. 2SC5501A ∠S ⏐ S ⏐ ⏐ S ⏐ ...

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