2sc5509 Renesas Electronics Corporation., 2sc5509 Datasheet

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2sc5509

Manufacturer Part Number
2sc5509
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10009EJ02V0DS (2nd edition)
Date Published September 2004 CP(K)
Printed in Japan
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., G
• Maximum available power gain: MAG = 14 dB TYP. @ V
• f
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
2SC5509
2SC5509-T2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note Free Air
Remark To order evaluation samples, contact your nearby sales office.
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
T
= 25 GHz technology adopted
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The unit sample quantity is 50 pcs.
Parameter
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
a
= 12 dB TYP. @ V
50 pcs (Non reel)
3 kpcs/reel
Quantity
NPN SILICON RF TRANSISTOR
Symbol
The mark
P
V
V
V
T
tot
I
T
CBO
CEO
EBO
stg
C
Note
j
A
CE
= +25°C)
= 2 V, I
DATA SHEET
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
shows major revised points.
C
= 10 mA, f = 2 GHz
−65 to +150
Ratings
CE
100
190
150
3.3
1.5
15
= 2 V, I
NPN SILICON RF TRANSISTOR
C
= 50 mA, f = 2 GHz
Supplying Form
Unit
mW
mA
°C
°C
V
V
V
©
NEC Compound Semiconductor Devices, Ltd. 2001, 2004
2SC5509

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2sc5509 Summary of contents

Page 1

... Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape = +25°C) A Symbol Ratings V 15 CBO V 3.3 CEO V 1.5 EBO I 100 C Note P 190 tot T 150 j −65 to +150 T stg The mark shows major revised points. 2SC5509 Unit °C °C © NEC Compound Semiconductor Devices, Ltd. 2001, 2004 ...

Page 2

... GHz Note 5 OIP GHz µ s, Duty Cycle ≤ output Data Sheet PU10009EJ02V0DS 2SC5509 MIN. TYP. MAX. Unit − − 600 nA − − 600 nA − 100 − GHz − ...

Page 3

... CE GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT MHz GHz 4.0 5.0 1 (V) CB Data Sheet PU10009EJ02V0DS 2SC5509 0.4 0.6 0.8 1.0 1.2 ( CURRENT GAIN vs. COLLECTOR CURRENT 0 100 Collector Current I (mA 100 1 000 Collector Current I (mA ...

Page 4

... OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 150 GHz out 125 20 15 100 – –15 –10 Data Sheet PU10009EJ02V0DS 2SC5509 = 2 V MSG MAG 21e 10 100 Collector Current I (mA) C 150 125 P out 100 –5 0 ...

Page 5

... GHz 25 5.0 20 4.0 15 3.0 10 2.0 5 1.0 0 0.0 100 1 Collector Current I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 6 2.5 GHz 25 5.0 20 4.0 15 3.0 10 2.0 5 1.0 0 0.0 100 1 Collector Current I Data Sheet PU10009EJ02V0DS 2SC5509 100 (mA 100 (mA ...

Page 6

... EQUAL NF CIRCLE GHz Unstable Area GHz 0.95 dB min Γ opt NF = 1.1 dB min Γ opt Data Sheet PU10009EJ02V0DS 2SC5509 ...

Page 7

... Rn/ min (GHz) (dB) 0.09 0.8 1.75 171.5 0.09 0.9 1.78 173.0 0.09 1.0 1.80 0.08 1.5 1.92 0.07 1.8 2.00 0.07 1.9 2.02 0.07 2.0 2.04 0.10 2.5 2.17 Data Sheet PU10009EJ02V0DS 2SC5509 Γ G Rn/50 opt a (dB) MAG. ANG. −164.8 20.7 0.30 0.08 −162.7 19.7 0.31 0.09 −160.7 18.8 0.32 0.09 −151.5 15.7 0.39 0.10 −146.3 14.4 0.45 0.10 −144.6 14.0 0.47 0.10 −142.9 13.6 0.49 0.11 −133.5 11.5 0.56 0.14 Γ G Rn/50 opt a (dB) MAG. ANG. −159.4 21.3 0.49 0.10 −157.2 20.3 0.49 0.10 −154.9 19.4 0.50 0.11 −144.7 16.2 0.55 0.14 −139.1 14.8 0.59 0.17 − ...

Page 8

... PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) 8 2.05±0.1 1.25±0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base Data Sheet PU10009EJ02V0DS 2SC5509 ...

Page 9

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10009EJ02V0DS 2SC5509 Not all The M8E 00 0110 9 ...

Page 10

... TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 2SC5509 0406 ...

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