2sc5754-t2 Renesas Electronics Corporation., 2sc5754-t2 Datasheet - Page 3

• Manufacturer Part Number: 2sc5754-t2
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Available Power Gain
Linear Gain
Gain 1 dB Compression Output Power
Collector Efficiency
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
3. MAG =
Parameter
40 to 100
S
S
21
12
R57
FB
(K –
(K
2
MAG
Symbol
P
h
C
– 1) )
S
FE
I
I
O (1 dB)
re
G
CBO
EBO
f
21e
T
Note 2
Note 1
C
350 s, Duty Cycle
L
Note 3
2
A
V
V
V
V
V
V
V
V
P
V
P
V
P
= +25 C)
Data Sheet PU10008EJ02V0DS
CB
BE
CE
CE
CE
CB
CE
CE
in
CE
in
CE
in
= 0 dBm, 1/2 Duty
= 15 dBm, 1/2 Duty
= 15 dBm, 1/2 Duty
= 5 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3.6 V, I
= 3.6 V, I
= 3.6 V, I
Test Conditions
C
E
C
C
C
E
C
= 0 mA
= 0 mA
= 100 mA
= 100 mA, f = 0.5 GHz
= 100 mA, f = 2 GHz
= 0 mA, f = 1 MHz
= 100 mA, f = 2 GHz
Cq
Cq
Cq
= 20 mA, f = 1.8 GHz,
= 4 mA, f = 1.8 GHz,
= 4 mA, f = 1.8 GHz,
2%
MIN.
5.0
40
16
TYP.
12.0
12.0
26.0
6.5
1.0
60
20
60
MAX.
1 000
1 000
100
1.5
2SC5754
dBm
GHz
Unit
nA
nA
dB
pF
dB
dB
%
3