2sc5777 Sanyo Semiconductor Corporation, 2sc5777 Datasheet - Page 2

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2sc5777

Manufacturer Part Number
2sc5777
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Diode Forward Voltage
100
1.0
10
10
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
0.1
0
1
INPUT
PW=20 s
D.C. 1%
Parameter
2
Collector-to-Emitter Voltage, V CE -- V
50
2
3
Collector Current, I C -- A
3
V R
V BE = --5V
5
I C -- V CE
h FE -- I C
4
7
I B1
I B2
R B
100 F
1.0
5
+
6
2
V CE (sat)
V BE (sat)
Symbol
470 F
h FE 1
h FE 2
7
t stg
V F
t f
V CC =200V
3
+
8
I B =0
V CE =5V
OUTPUT
5
R L =40
V CE =5V, I C =1A
V CE =5V, I C =7A
I C =6.3A, I B =1.6A
I C =6.3A, I B =1.6A
I C =5A, I B1 =0.8A, I B2 =--2.5A
I C =5A, I B1 =0.8A, I B2 =--2.5A
I EC =8A
9
IT03533
IT03535
7
10
10
2SC5777
Conditions
0.01
1.0
0.1
10
10
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
V CE =5V
I C / I B =5
0.2
2
Base-to-Emitter Voltage, V BE -- V
3
Collector Current, I C -- A
0.4
V CE (sat) -- I C
5
min
I C -- V BE
7
8
4
0.6
1.0
Ratings
typ
0.8
2
3
max
3.0
1.5
3.0
0.2
2.2
1.0
7
5
No.6991-2/4
IT03534
IT03536
7
Unit
V
V
V
s
s
1.2
10

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