2sc5623 Renesas Electronics Corporation., 2sc5623 Datasheet - Page 2
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2sc5623
Manufacturer Part Number
2sc5623
Description
Silicon Npn Epitaxial High Frequency Low Noise Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5623.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5623
Manufacturer:
HITACHI/日立
Quantity:
20 000
2SC5623
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
2
Symbol
V
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
(BR)CBO
Symbol
V
V
V
I
Pc
Tj
Tstg
C
CBO
CEO
EBO
Min
10
—
—
—
60
—
23
14
—
Typ
—
—
—
—
100
0.15
26
18
1.8
Ratings
10
3.5
1
12
50
150
–55 to +150
Max
—
1
1
10
140
0.4
—
—
2.3
Unit
V
V
pF
GHz
dB
dB
A
A
A
Test Conditions
I
V
V
V
V
V
f = 1 MHz
V
f = 2 GHz
V
f = 1.8 GHz
V
f = 1.8 GHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A , I
Unit
V
V
V
mA
mW
C
C
= 8 V , I
= 3 V , R
= 1 V , I
= 2 V , I
= 2 V , I
= 2 V , I
= 2 V , I
= 2 V , I
E
C
C
E
C
C
C
E
BE
= 0
= 0
= 0
= 10 mA
= 10 mA
= 10 mA
= 3 mA
= 0
=