2sc5629 Renesas Electronics Corporation., 2sc5629 Datasheet - Page 2
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2sc5629
Manufacturer Part Number
2sc5629
Description
Silicon Npn Epitaxial High Frequency Amplifier / Oscillator
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5629.pdf
(10 pages)
2SC5629
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
2
Symbol
V
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
(BR)CBO
Symbol
V
V
V
I
Pc
Tj
Tstg
C
CBO
CEO
EBO
Min
15
—
—
—
80
—
2
6
—
Typ
—
—
—
—
120
1.4
5
9
1.1
Ratings
15
6
1.5
50
80
150
–55 to +150
Max
—
1
1
10
160
1.9
—
—
1.9
Unit
V
mA
V
pF
GHz
dB
dB
A
A
Test Conditions
I
V
V
V
V
V
f = 1MHz
V
V
f = 900MHz
V
f = 900MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A , I
Unit
V
V
V
mA
mW
C
C
= 12V , I
= 6V , R
= 1.5V , I
= 1V , I
= 1V , I
= 1V , I
= 1V, I
= 1V, I
C
C
C
E
C
E
BE
= 5mA
= 5mA
E
= 0
= 5mA
= 5mA
C
= 0
= 0
=
= 0