2sc5939g Panasonic Corporation of North America, 2sc5939g Datasheet
2sc5939g
Manufacturer Part Number
2sc5939g
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5939G.pdf
(4 pages)
Transistors
2SC5939G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SSS-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common base)
Collector-base parameter
cuited) C
and automatic insertion through the tape packing
FE
ratio
ob
Parameter
Parameter
and reverse transfer capacitance (Common base) C
This product complies with the RoHS Directive (EU 2002/95/EC).
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
V
bb
P
CBO
I
T
V
V
CEO
EBO
a
∆h
I
stg
C
CE(sat)
C
C
h
C
CBO
' • C
j
f
CEO
EBO
= 25°C
FE
T
ob
rb
FE
C
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
V
C
E
C
100
125
CB
CE
CE
CE
CE
CB
CB
CB
15
10
50
= 2 mA, I
= 10 µA, I
= 20 mA, I
3
SJC00400AED
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
B
E
E
C
C
C
E
E
C
Conditions
Unit
B
mW
E
= −5 mA, f = 200 MHz
mA
= −5 mA, f = 31.9 MHz
= 0
= 5 mA
= 5 mA
= 100 µA
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
= 0
V
V
V
= 4 mA
= 0
rb
■ Package
• Code
• Marking Symbol: 1S
• Pin Name
SSSMini3-F2
1. Base
2. Emitter
3. Collector
0.75
Min
1.4
10
75
3
0.45
Typ
1.9
1.4
11
Max
400
1.6
0.5
2.7
1
GHz
Unit
µA
pF
pF
ps
V
V
V
1
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2sc5939g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5939G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common base • ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5939G 120 100 100 120 140 Ambient temperature T (°C) a CE(sat 0.1 = 85° −25°C 25°C 0.01 0 Collector current I (mA) ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SSSMini3-F2 1.20 ±0.05 +0.05 0.30 − 0. (0.4) (0.4) 0.80 ±0.05 +0.05 0.20 − 0.02 Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...