2sc5950 Panasonic Corporation of North America, 2sc5950 Datasheet
2sc5950
Manufacturer Part Number
2sc5950
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5950.pdf
(2 pages)
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Manufacturer
Quantity
Price
Company:
Part Number:
2sc5950GSL
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Transistors
2SC5950
Silicon NPN epitaxial planar type
For general amplifi cation
Complementary to 2SA2122
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
High forward current transfer ratio h
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and automatic
Smini typ package, allowing downsizing of the equipment and automatic
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
High forward current transfer ratio h
High forward current transfer ratio h
insertion through the tape packing
Parameter
Parameter
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
FE
FE
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
V
T
T
T
°C
I
P
I
T
T
T
CBO
CEO
EBO
CP
Symbol
stg
stg
C
V
C
j
j
V
V
V
I
I
h
h
h
CE(sat)
C
CBO
CEO
CBO
f
f
f
CEO
EBO
FE
FE
T
T
ob
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
C
C
E
E
E
C
100
200
150
150
60
50
CB
CE
CE
CE
CE
CE
CE
CB
CB
= 10
= 10
7
= 10 µA, I
= 2 mA, I
= 100 mA, I
= 20 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
SJC00333AED
µA, I
B
C
E
E
E
B
C
E
E
E
E
E
E
E
E
E
= 0
Unit
mW
Conditions
mA
mA
= 0
= 0
= 0
B
= 0
= 0
= 0
= 2 mA
=
=
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
V
V
V
= 10 mA
−2 mA, f = 200 MHz
Marking Symbol: 7M
1: Base
2: Emitter
3: Collector
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
Min
160
±0.1
±0.2
60
50
7
2
Typ
100
0.1
2.2
SMini3-G1 Package
Max
100
460
0.1
0.3
0.15
+0.10
–0.05
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sc5950 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplifi cation Complementary to 2SA2122 Features Features High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio h ...
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...