2sc5950g Panasonic Corporation of North America, 2sc5950g Datasheet

no-image

2sc5950g

Manufacturer Part Number
2sc5950g
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc5950gSL
Manufacturer:
ELPIDA
Quantity:
51
Part Number:
2sc5950gSL
Manufacturer:
SANYO/三洋
Quantity:
20 000
Transistors
2SC5950G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2122G
 Features
 Absolute Maximum Ratings T
 Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
 High forward current transfer ratio h
 Smini typ package, allowing downsizing of the equipment and automatic
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
insertion through the tape packing
Parameter
Parameter
a
= 25°C±3°C
FE
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
V
T
I
P
CBO
I
T
CEO
EBO
Symbol
CP
stg
C
V
C
j
V
V
V
I
I
h
CE(sat)
C
CBO
CEO
CBO
f
CEO
EBO
FE
T
ob
-55 to +150
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
100
200
150
150
60
50
CB
CE
CE
CB
CB
7
= 10 mA, I
= 2 mA, I
= 10 mA, I
= 100 mA, I
= 20 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
SJC00371AED
B
C
E
B
C
E
E
E
= 0
Unit
mW
Conditions
mA
mA
= 0
= 0
B
= 0
= 0
= 2 mA
= -2 mA, f = 200 MHz
= 0, f = 1 MHz
°C
°C
V
V
V
= 10 mA
 Package
 Code
 Marking Symbol: 7M
 Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
160
60
50
7
Typ
100
0.1
2.2
Max
100
460
0.1
0.3
MHz
Unit
mA
mA
pF
V
V
V
V
1

Related parts for 2sc5950g

2sc5950g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G  Features  High forward current transfer ratio h FE  Smini typ package, allowing downsizing of the equipment and automatic insertion through the tape packing  ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5950G 2SC5632_P -  240 200 160 120 120 160 ( ° 2SC5632_V -I CE(sat  I CE(sat 75° 0.1 25°C −25°C 0.01 0.001 1 10 ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

Related keywords