2sc5945 Renesas Electronics Corporation., 2sc5945 Datasheet - Page 2

• Manufacturer Part Number: 2sc5945
• Description: Transistors Si Npn Epitaxial High Frequency Medium Power Amplifier High Frequency Medium Power Amplifier
• Manufacturer: Renesas Electronics Corporation.

2SC5945
Electrical Characteristics
DC current transfer ratio
Reverse Transfer Capacitance
Transition Frequency
Maximum Available Gain
Power Gain
Power Added Efficiency
1dB Compression Point at output
1dB Compression Point at output
Main Characteristics
Rev.3.00 Aug 03, 2006 page 2 of 35
1.5
1.0
0.5
Item
0
Collector Power Dissipation Curve
Ambient Temperature T
50
100
*(40 x 40 x 1 mm)
Value on PCB
Symbol
P1dB
P1dB
MAG
PAE
h
PG
C
f
FE
150
T
re
a
(°C)
200
Min
110
30
4
15.5
Typ
150
+24
+26
1.0
40
9
6
Max
190
500
400
300
200
100
0
Collector to Emitter Voltage V
Typical Output Characteristics
GHz
dBm
dBm
Unit
dB
dB
pF
%
1
V
V
emitter grounded
V
f = 1 GHz
V
f = 2.4 GHz
V
f = 2.4 GHz, Pin= +20 dBm
V
f = 2.4 GHz
V
f = 2.4 GHz
CE
CB
CE
CE
CE
CE
CE
2
= 3 V, I
= 2 V, I
= 3 V, I
= 3 V, I
= 3.3 V, I
= 3.3 V, I
= 3.3 V, I
Test Conditions
3
C
E
C
C
= 0, f = 1 MHz,
= 100 mA
= 100 mA,
= 100 mA,
Cq
Cq
Cq
= 100 mA,
= 100 mA,
= 250 mA,
4
CE
(Ta = 25°C)
(V)
5