2sc5980 Sanyo Semiconductor Corporation, 2sc5980 Datasheet

2sc5980

Manufacturer Part Number

2sc5980

Description

Npn Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5980.pdf (4 pages)

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Ordering number : ENN8091

2SC5980

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

•

DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.

Adoption of FBET, MBIT process.

High current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

Narrow h FE width.

High allowable power dissipation.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

NPN Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Symbol

V CBO

V CEO

V EBO

V CES

I CBO

I EBO

Tstg

h FE

I CP

P C

I C

I B

V CB =40V, I E =0

V EB =4V, I C =0

V CE =2V, I C =500mA

Tc=25 C

2SC5980

Conditions

21405EA TS IM TB-00000320

min

250

Ratings

typ

Ratings

--55 to +150

Continued on next page.

max

100

150

1.0

400

0.1

No.8091-1/4

Unit

Related parts for 2sc5980

2sc5980 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5980 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Symbol Conditions ...

Page 2

... Switching Time Test Circuit I B1 PW= INPUT 100 -- =20I B1 = --20I B2 =2.5A 2SC5980 Symbol Conditions =10V =500mA Cob V CB =10V, f=1MHz I C =3.5A =175mA V CE (sat =2A =40mA V BE (sat =2A =40mA V (BR)CBO ...

Page 3

... Collector-to-Base Voltage (sat 0.01 0.1 1.0 Collector Current 2SC5980 = 0.7 0.8 0.9 1.0 IT08219 1000 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. 2SC5980 1 1.0 0.8 ...

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