2n3737ub SEMICOA, 2n3737ub Datasheet
2n3737ub
Manufacturer Part Number
2n3737ub
Description
Silicon Npn Transistor
Manufacturer
SEMICOA
Datasheet
1.2N3737UB.pdf
(2 pages)
Copyright 2002
Rev. G
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500
• JAN level (2N3737UBJ)
• JANTX level (2N3737UBJX)
• JANTXV level (2N3737UBJV)
• JANS level (2N3737UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
• Radiation testing (total dose) upon request
Absolute Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
Derate linearly above 37.5°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
2072 for JANTXV and JANS
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
A
Parameter
= 25°C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Semicoa Semiconductors, Inc.
www.SEMICOA.com
Appendix E
Symbol
V
V
V
R
T
P
T
I
CEO
CBO
EBO
STG
θJA
C
T
J
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0806
• Reference document:
Benefits
• Qualification Levels: JAN, JANTX,
• Radiation testing available
MIL-PRF-19500/395
JANTXV and JANS
T
C
-65 to +200
= 25°C unless otherwise specified
Rating
3.07
325
1.5
0.5
40
75
5
2N3737UB
Silicon NPN Transistor
D a t a S h e e t
mW/°C
°C/W
Volts
Volts
Volts
Unit
°C
W
A
Page 1 of 2
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2n3737ub Summary of contents
Page 1
... Screening and processing per MIL-PRF-19500 • JAN level (2N3737UBJ) • JANTX level (2N3737UBJX) • JANTXV level (2N3737UBJV) • JANS level (2N3737UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www ...
Page 2
... I = 100 =100 mA OFF Semicoa Semiconductors, Inc. www.SEMICOA.com 2N3737UB Silicon NPN Transistor characteristics specified at T Min Typ Max 40 10 250 200 250 10 100 Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min ...