2n3866aub Microsemi Corporation, 2n3866aub Datasheet - Page 2

• Manufacturer Part Number: 2n3866aub
• Description: Npn Silicon High-frequency Transistor
• Manufacturer: Microsemi Corporation

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (T
Parameters / Test Conditions
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
I
Collector-Emitter Saturation Voltage
I
Collector-Emitter Cutoff Current – High Temperature Operation
V
Forward Current Transfer Ratio – Low Temperature Operation
V
I
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small–Signal Short-Circuit Forward
Current Transfer Ratio
I
Output Capacitance
V
POWER OUTPUT CHARACTERISTICS
Parameters / Test Conditions
Power Output
V
V
Collector Efficiency
V
V
* See Figure 4 on /398
Clamp Inductive
Collector-Emitter Breakdown Voltage
V
I
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
T4-LDS-0175 Rev. 1 (101096)
T
C
C
C
C
C
C
CE
CE
CB
CC
CC
CC
CC
BE
A
= 100μAdc, V
= 360mAdc, V
= 100mAdc, I
= 50mAdc, T
= 50mAdc, V
= 40mAdc
= +150°C
= 55Vdc
= 5.0Vdc
= 28Vdc, I
= 28Vdc; P
= 28Vdc; P
= 28Vdc; P
= 28Vdc; P
= 1.5Vdc
E
A
in
in
in
in
CE
B
CE
= 0, 100kHz ≤ f ≤ 1.0MHz
CE
= -55°C
= 0.15W; f = 400MHz *
= 0.075W; f = 400MHz *
= 0.15W; f = 400MHz
= 0.075W; f = 400MHz
= 10mAdc
= 15Vdc, f = 100MHz
= 5.0Vdc
= 5.0Vdc
(3)
A
= +25°C, unless otherwise noted)
2N3866, 2N3866UB
2N3866A, 2N3866AUB
2N3866, 2N3866UB
2N3866A, 2N3866AUB
2N3866, 2N3866UB
2N3866A, 2N3866AUB
2N3866, 2N3866UB
2N3866A, 2N3866AUB
TECHNICAL DATA SHEET
V
Symbol
Symbol
Symbol
V
I
(BR)CEX
H
C
P
P
|h
h
CE(sat)
CES2
n1
n2
1out
2out
FE3
obo
FE
fe
|
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
Min.
Min.
Min.
2.5
4.0
1.0
0.5
15
25
12
45
40
55
5
8
7
Max.
Max.
Max.
200
200
1.0
2.0
8.0
7.5
3.5
2.0
Page 2 of 4
mAdc
Unit
Unit
Unit
Vdc
Vdc
pF
W
%