2n650406 ON Semiconductor, 2n650406 Datasheet

2n650406

Manufacturer Part Number

2n650406

Description

Darlington Power Transistors Pnp Silicon

Manufacturer

ON Semiconductor

Datasheet

1.2N650406.pdf (6 pages)

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2N6667, 2N6668

Darlington Silicon

Power Transistors

applications.

•

*For additional information on our Pb-Free strategy and soldering details, please

November, 2007 - Rev. 6

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Designed for general-purpose amplifier and low speed switching

High DC Current Gain -

Collector-Emitter Sustaining Voltage - @ 200 mAdc

Low Collector-Emitter Saturation Voltage -

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

TO-220AB Compact Package

Complementary to 2N6387, 2N6388

Pb-Free Packages are Available*

CE(sat)

CEO(sus)

BASE

= 3500 (Typ) @ I

= 2.0 Vdc (Max)@ I

Figure 1. Darlington Schematic

= 60 Vdc (Min) - 2N6667

= 80 Vdc (Min) - 2N6668

≈ 8 k

= 4.0 Adc

≈ 120

COLLECTOR

EMITTER

= 5.0 Adc

2N6667

2N6667G

2N6668

2N6668G

Device

POWER TRANSISTORS

CASE 221A-09

ORDERING INFORMATION

10 A, 60-80 V, 65 W

TO-220AB

WW = Work Week

STYLE 1:

DARLINGTON

http://onsemi.com

PNP SILICON

PIN 1. BASE

= 7 or 8

= Assembly Location

= Year

= Pb-Free Package

TO-220AB

(Pb-Free)

2. COLLECTOR

3. EMITTER

4. COLLECTOR

Package

Publication Order Number:

MARKING

DIAGRAM

50 Units/Rail

AYWWG

2N666x

Shipping

2N6667/D

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