zumt850c Diodes, Inc., zumt850c Datasheet

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zumt850c

Manufacturer Part Number
zumt850c
Description
Sot323 Npn Silicon Planar General Purpose Transistor
Manufacturer
Diodes, Inc.
Datasheet
SOT323 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998
Partmarking Detail:
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Collector-Emitter Saturation Voltage at I
operating point I
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
Operating and Storage
Temperature Range
PARAMETER
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
C
= 11mA, V
amb
=25°C
SYMBOL MIN.
V
V
V
CBO
CE(sat)
BE(sat)
BE
CE
= 1V at constant base current.
ZUMT850B
ZUMT850C
580
V
V
I
I
I
P
T
V
V
SYMBOL
C
EM
BM
tot
j
CBO
CES
CEO
EBO
:T
C
stg
= 10mA for the characteristics going through the
- T1B
- T21
amb
TYP.
90
200
300
700
900
660
= 25°C unless otherwise stated).
MAX.
15
5
250
600
600
700
770
-55 to +150
UNIT
nA
mV
mV
mV
mV
mV
VALUE
A
100
200
200
330
50
50
45
5
ZUMT850B
ZUMT850C
CONDITIONS.
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CB
CB
= 10mA, I
=100mA, I
=10mA*
=10mA ,I
=100mA,I
=2mA, V
=10mA, V
= 30V
= 30V, T
CE
B
B
B
CE
=0.5mA
B
=5V
=0.5mA
=5mA
amb
=5mA
UNIT
=5V
mW
mA
mA
mA
°C
V
V
V
V
=150°C

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zumt850c Summary of contents

Page 1

... TYP. CBO 90 CE(sat) 200 300 700 BE(sat) 900 580 660 BE = 10mA for the characteristics going through the constant base current. CE ZUMT850B ZUMT850C VALUE 100 200 200 330 -55 to +150 MAX. UNIT CONDITIONS 30V CB ...

Page 2

TYPICAL CHARACTERISTICS ...

Page 3

... ZUMT850B ZUMT850C ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Noise Figure Equivalent Noise Voltage Dynamic Group B Characteristics Group C Group B Group C Group B Group C Group B Group C Static Forward Group B Current Ratio Group C Transition Frequency Collector-Base Capacitance SYMBOL MIN. TYP. MAX. UNIT CONDITIONS – 1 – ...

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