2sc6022 Sanyo Semiconductor Corporation, 2sc6022 Datasheet

2sc6022

Manufacturer Part Number

2sc6022

Description

Npn Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC6022.pdf (4 pages)

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Ordering number : ENN8355

2SC6022

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

•

Relay drivers, lamp drivers, motor drivers, flash.

Adoption of FBET and MBIT processes.

Large current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

Narrow h FE range.

High allowable power dissipation.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

NPN Epitaxial Planar Silicon Transistor

DC / DC Converter Applications

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

Tstg

h FE

I CP

P C

I C

I B

f T

V CB =30V, I E =0A

V EB =4V, I C =0A

V CE =2V, I C =500mA

V CE =10V, I C =500mA

Tc=25 C

2SC6022

Conditions

62005EA MS IM TB-00001412

min

250

Ratings

typ

Ratings

320

--55 to +150

Continued on next page.

max

150

1.2

400

0.1

No.8355-1/4

Unit

MHz

Related parts for 2sc6022

2sc6022 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC6022 NPN Epitaxial Planar Silicon Transistor Converter Applications Symbol Conditions ...

Page 2

... Collector-to-Emitter Voltage 2SC6022 Symbol Conditions Cob V CB =10V, f=1MHz I C =2.5A =50mA V CE (sat =4A =200mA V BE (sat =2.5A =50mA V (BR)CBO =0A V (BR)CEO I C =1mA (BR)EBO See specified Test Circuit ...

Page 3

... I CP =12A = 1 0 Tc= Single pulse 0. 0.01 0.1 1.0 Collector-to-Emitter Voltage 2SC6022 = 100 0.01 IT09468 =20 f=1MHz ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. 2SC6022 120 140 160 IT09509 PS No ...

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