2sc6045 Panasonic Corporation of North America, 2sc6045 Datasheet
2sc6045
Manufacturer Part Number
2sc6045
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC6045.pdf
(2 pages)
Transistors
2SC6045
Silicon NPN epitaxial planar type
For UHF band low noise amplifi cation
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
Low noise fi gure NF
Low noise fi gure NF
High forward transfer gain
High forward transfer gain
High transition frequency f
High transition frequency f
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise fi gure
High transition frequency f
High transition frequency f
Parameter
Parameter
T
T
|S
21e
|
2
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
V
T
T
T
°C
P
I
T
T
T
CBO
CEO
EBO
Symbol
stg
stg
C
C
j
j
|S
V
V
G
G
G
I
I
h
h
h
C
NF
CBO
EBO
CBO
f
f
f
21e
CEO
FE
FE
UM
UM
T
T
ob
|
2
−55 to +125
Rating
I
I
V
V
V
V
V
V
V
V
C
C
100
125
15
10
80
CB
EB
CE
CE
CE
CE
CE
CE
CB
CE
CE
CE
CE
CE
CE
CE
CE
CE
2
= 10 µA, I
= 100 µA, I
= 10 V, I
= 2 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 10 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
SJC00334AED
C
C
C
C
C
C
E
E
E
E
E
E
E
E
E
= 0
= 20 mA
= 15 mA, f = 0.8 GHz
= 15 mA, f = 0.8 GHz
= 15 mA, f = 0.8 GHz
= 7 mA, f = 0.8 GHz
Unit
mW
B
Conditions
mA
= 0
= 0
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
V
V
V
= 0
Marking Symbol: 3M
1: Base
2: Emitter
3: Collector
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
3
0.80
1.20
1
Min
15
10
50
11
5
±0.05
±0.05
(0.40)
2
Typ
150
0.7
1.3
14
15
6
SSSMini3-F1 Package
0.10
Max
300
1.2
2.0
1
1
+0.05
–0.02
Unit: mm
GHz
Unit
µA
µA
dB
dB
dB
pF
V
V
1
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2sc6045 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC6045 Silicon NPN epitaxial planar type For UHF band low noise amplifi cation Features Features Low noise fi gure NF Low noise fi gure NF High forward transfer gain ...
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...