2sc6045g Panasonic Corporation of North America, 2sc6045g Datasheet

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2sc6045g

Manufacturer Part Number
2sc6045g
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors
2SC6045G
Silicon NPN epitaxial planar type
For UHF band low noise amplification
 Features
 Absolute Maximum Ratings T
 Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
 Low noise figure NF
 High forward transfer gain |S
 High transition frequency f
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Parameter
Parameter
T
21e
|
2
a
= 25°C±3°C
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
V
T
P
CBO
I
T
CEO
EBO
Symbol
stg
C
C
j
|S
V
V
G
I
I
h
C
NF
CBO
EBO
CBO
f
21e
CEO
FE
UM
T
ob
|
2
-55 to +125
Rating
I
I
V
V
V
V
V
V
V
V
C
C
100
125
15
10
80
CB
EB
CE
CE
CB
CE
CE
CE
2
= 10 mA, I
= 100 mA, I
= 10 V, I
= 2 V, I
= 8 V, I
= 8 V, I
= 10 V, I
= 8 V, I
= 8 V, I
= 8 V, I
SJC00404AED
C
C
C
C
C
C
E
E
E
= 0
= 20 mA
= 15 mA, f = 0.8 GHz
= 15 mA, f = 0.8 GHz
= 15 mA, f = 0.8 GHz
= 7 mA, f = 0.8 GHz
Unit
mW
B
Conditions
mA
= 0
= 0
= 0, f = 1 MHz
°C
°C
V
V
V
= 0
 Package
 Code
 Marking Symbol: 3M
 Pin Name
SSSMini3-F2
1: Base
2: Emitter
3: Collector
Min
15
10
50
11
5
Typ
150
0.7
1.3
14
15
6
Max
300
1.2
2.0
1
1
GHz
Unit
mA
mA
dB
dB
dB
pF
V
V
1

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2sc6045g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC6045G Silicon NPN epitaxial planar type For UHF band low noise amplification  Features  Low noise figure NF  High forward transfer gain | 21e  High transition frequency f T  Absolute Maximum Ratings T = 25° ...

Page 2

... 180 µA 160 µA 12 140 µA 120 µA 100 µ µA 60 µ µA 20 µ Collector-emitter voltage V CE 2SC6045G_hFE-IC h  25° 85°C 20 −25° Collector current I ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). SSSMini3-F2 1.20 ±0.05 +0.05 0.30 − 0. (0.4) (0.4) 0.80 ±0.05 +0.05 0.20 − 0.02 Unit: mm +0.05 0.13 − 0.02 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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