2sc6065 Sanyo Semiconductor Corporation, 2sc6065 Datasheet

2sc6065

Manufacturer Part Number

2sc6065

Description

Npn Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC6065.pdf (4 pages)

Current page: 1 of 4
Download datasheet (39Kb)

Ordering number : EN8561

2SC6065

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

•

High breakdown voltage.

High-speed switching.

Wide ASO.

Adoption of MBIT process.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

h FE 1

h FE 2

h FE 3

Tstg

I CP

P C

I C

I B

SANYO Semiconductors

V CB =400V, I E =0A

V EB =5V, I C =0A

V CE =5V, I C =0.1A

V CE =5V, I C =0.7A

V CE =5V, I C =1mA

PW 300 s, duty cycle 10%

2SC6065

Conditions

80906 / 12006CB MS IM TB-00001637

DATA SHEET

min

Ratings

typ

Ratings

--55 to +150

Continued on next page.

max

500

400

150

1.5

0.7

0.9

No.8561-1/4

Unit

Related parts for 2sc6065

2sc6065 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC6065 SANYO Semiconductors NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications ...

Page 2

... Collector-to-Emitter Voltage 2SC6065 Symbol Conditions =10V =0.1A Cob V CB =10V, f=1MHz V CE (sat =0.7A =0.14A V BE (sat =0.7A =0.14A V (BR)CBO I C =1mA =0A V (BR)CEO I C =5mA (BR)EBO I E =1mA = =1A ...

Page 3

... Single pulse 0.001 0.1 1.0 10 Collector-to-Emitter Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 100 Ambient Temperature 2SC6065 = 0.01 IT06215 1 0 ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. 2SC6065 PS No.8561-4/4 ...

Related keywords

2sc6065 datasheet
2sc6065 data sheet
2sc6065 pdf datasheet
2sc6065 component
2sc6065 part
2sc6065 distributor
2sc6065 RoHS
2sc6065 datasheet download