2sa2081 Renesas Electronics Corporation., 2sa2081 Datasheet - Page 3

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2sa2081

Manufacturer Part Number
2sa2081
Description
Silicon Pnp Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SA2081
Main Characteristics
Rev.1.00 Aug 10, 2005 page 3 of 4
–100m
–100µ
–10m
–10µ
–1m
150
100
50
50
20
10
0
5
2
1
Maximum Collector Dissipation Curve
–1
0
Base to Emitter Voltage
*Value on the glass epoxy board
Collector to Base Voltage
V
Pulse test
Collector Output Capacitance vs.
(10 mm x 10 mm x 0.7 mm)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
CE
f = 1 MHz
I
E
= 0
= –12 V
Collector to Base Voltage
–0.2
–2
50
–0.4
–5
–0.6
–10
100
–20
–0.8
V
BE
V
CB
(V)
–1.0
150
–50
(V)
10,000
–0.28
–0.24
–0.20
–0.16
–0.12
–0.08
–0.04
1,000
–10
100
Collector to Emitter Saturation Voltage vs.
–8
–6
–4
–2
10
–10 µ
0
0
–1
Collector to Emitter Voltage V
I
Typical Output Characteristics
DC Current Transfer Ratio vs.
C
Pulse test
–2
Collector Current
= 10 I
Collector Current
–2
–100 µ
Collector Currrent
Collector Current
B
–5
–4
–10 –20
–1 m
Ta = 75°C
–6
–5 µA
I
–10
V
Pulse test
B
I
CE
C
= 0
I
C
–10 m –50 m
= –12 V
(mA)
–8
25
(A)
–50 –100
CE
–10
(V)

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