2sa2082 Panasonic Corporation of North America, 2sa2082 Datasheet
2sa2082
Manufacturer Part Number
2sa2082
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA2082.pdf
(3 pages)
Transistors
2SA2082
Silicon PNP epitaxial planar type
For high speed switching
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
High speed switching
Low collector-emitter saturation voltage V
Suitable for high-density mounting and douwsizing of the equipment for
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base cutoff current (Emitter open)
Emitter-base cut-off current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Parameter
Parameter
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
= 25°C
Symbol
CE(sat)
V
V
V
T
I
P
I
T
CBO
CEO
EBO
Symbol
CP
stg
C
V
C
j
I
I
h
h
CE(sat)
C
CBO
EBO
t
t
FE1
FE2
f
off
t
on
T
ob
s
–55 to +125
Rating
V
V
V
V
I
V
V
Switching time measurement circuit
–100
C
–10
–10
–50
100
125
CB
EB
CE
CE
CB
CB
–4
= –10 mA, I
= –3 V, I
= –1 V, I
= –1 V, I
= –8 V, I
= –10 V, I
= –5 V, I
SJC00328AED
E
C
C
C
E
Unit
mW
Conditions
E
mA
mA
B
= 0
= 0
= –10 mA
= –1 mA
= 0, f = 1 MHz
°C
°C
V
V
V
= 10 mA, f = 200 MHz
= –1 mA
Marking Symbol : 4N
1: Base
2: Emitter
3: Collector
3
1.00
±0.05
Min
800
50
30
2
1
1 500
– 0.1
Typ
3
2.2
12
20
19
0.25
±0.05
0.65
0.39
– 0.1
– 0.1
– 0.2
Max
±0.01
150
ML3-N2 Package
+0.01
−0.03
0.25
±0.05
1
2
Unit: mm
0.05
MHz
Unit
µA
µA
pF
ns
ns
ns
±0.03
V
1
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2sa2082 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Features High speed switching Low collector-emitter saturation voltage V Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package Package: 0.6 mm × ...
Page 2
... CB SJC00328AED 2SA2162_ 120 100 100 120 140 Ambient temperature T a 2SA2082_V -I BE(sat I BE(sat) C − −25°C a 75°C −1 25°C − 0.1 −1000 − 0.1 −1 −10 −100 ( mA ) Collector current I ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...