2sa2039 ON Semiconductor, 2sa2039 Datasheet

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2sa2039

Manufacturer Part Number
2sa2039
Description
Pnp / Npn Epitaxial Planar Silicon Transistors
Manufacturer
ON Semiconductor
Datasheet

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Ordering number : ENN6912B
2SA2039 / 2SC5706
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA2039
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
V CBO
V CEO
V EBO
V CES
I CBO
I EBO
Tstg
h FE
I CP
P C
I C
I B
Tj
f T
2SA2039 / 2SC5706
Tc=25 C
V CB =(--)40V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)2V, I C =(- -)500mA
V CE =(--)10V, I C =(--)500mA
PNP / NPN Epitaxial Planar Silicon Transistors
High Current Switching Applications
Conditions
62405EA MS IM TB-00001404 / 30101 TS IM TA-3232
Conditions
min
200
(360)400
Ratings
typ
Ratings
--55 to +150
Continued on next page.
(--50)100
(--50)100
max
(--)7.5
(--)1.2
(--)50
(--)6
(--)5
150
0.8
(--)1
(--)1
560
15
No.6912-1/5
Unit
MHz
Unit
W
W
V
V
V
V
A
A
A
A
A
C
C

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2sa2039 Summary of contents

Page 1

... Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. • Specifications ( ) : 2SA2039 Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ...

Page 2

... 100 F 470 -- =25V 10I B1 = --10I =1A For PNP, the polarity is reversed. 2SA2039 / 2SC5706 Symbol Conditions Cob V CB =(--)10V, f=1MHz V CE (sat =(--)1A =(--)50mA V CE (sat =(--)2A =(- -)100mA V BE (sat =(--)2A =(- -)100mA V (BR)CBO ...

Page 3

... Collector Current (sat --10000 --1000 --100 -- --0.01 --0.1 --1.0 Collector Current 2SA2039 / 2SC5706 5 2SA2039 2SC5706 =0mA 0 --1.2 --1.4 0 IT02974 4.0 2SA2039 --2V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --1.0 --1.2 --1.4 0 IT00154 1000 2SA2039 --2V ...

Page 4

... Collector-to-Base Voltage 1000 100 --0.01 --0.1 Collector Current 2SA2039 / 2SC5706 10000 1000 100 --10 0.01 IT02977 10 2SA2039 = ...

Page 5

... This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. 2SA2039 / 2SC5706 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 100 IT02980 120 140 160 IT02982 2SA2039 / 2SC5706 100 120 140 Ambient Temperature No.6912-5/5 160 IT02981 ...

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