2sc2618rdtl-e Renesas Electronics Corporation., 2sc2618rdtl-e Datasheet - Page 2

• Manufacturer Part Number: 2sc2618rdtl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC2618
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Note:
Mark
h
Rev.2.00 Aug 10, 2005 page 2 of 4
FE1
Grade
1. The 2SC2618 is grouped by h
100 to 200
Item
RC
C
160 to 320
RD
D
FE1
Symbol
V
V
V
V
h
(BR)CBO
(BR)CEO
(BR)EBO
h
I
as follows.
FE1
CE(sat)
V
CBO
FE2
BE
*
1
Min
100
35
35
10
—
—
—
4
0.64
Typ
0.2
—
—
—
—
—
—
Max
320
0.5
0.6
—
—
—
—
—
Unit
V
V
V
V
V
A
I
I
I
V
V
(Pulse test)
V
(Pulse test)
I
(Pulse test)
V
(Pulse test)
C
C
E
C
CB
CE
CE
CE
= 10 A, I
= 10 A, I
= 1 mA, R
= 150 mA, I
= 20 V, I
= 3 V, I
= 3 V, I
= 3 V, I
Test conditions
C
C
C
C
E
BE
C
= 10 mA
= 500 mA
= 10 mA
= 0
= 0
B
= 0
=
= 15 mA
(Ta = 25°C)