2sc2690 Renesas Electronics Corporation., 2sc2690 Datasheet

2sc2690

Manufacturer Part Number

2sc2690

Description

Npn Silicon Epitaxial Transistor For Low/high Frequency Power Amplification

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SC2690.pdf (4 pages)

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Document No. D17501EJ2V0DS00 (2nd edition)

(Previous No. TC-3586)

Date Published March 2005 NS CP(K)

Printed in Japan

DESCRIPTION

in audio and radio frequency power amplifiers.

FEATURES

• Suitable for use in driver stage of 50 to 100 W audio amplifiers

• High voltage and high f

• Complementary to the 2SA1220 and 2SA1220A PNP transistors.

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (T

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

Total Power Dissipation (T

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

These products are general purpose transistors designed for use

and output stage of TV vertical deflection circuit.

CEO

= 175 MHz (V

= 120 V (2SC2690) / 160 V (2SC2690A)

2SC2690

2SC2690-AZ

2SC2690A

2SC2690A-AZ

PART NUMBER

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION

Note

= 5.0 V, I

Note

NPN SILICON EPITAXIAL TRANSISTOR

= 25°C)

= 0.2 A)

TO-126 (MP-5)

The mark

PACKAGE

C(pulse)

C(DC)

B(DC)

CBO

CEO

EBO

stg

= 25°C)

DATA SHEET

shows major revised points.

2SA2690

120

−55 to +150

150

5.0

1.2

2.5

0.3

1.2

SILICON POWER TRANSISTOR

2SC2690,2690A

2SA2690A

160

PACKAGE DRAWING (Unit: mm)

2.3 TYP.

12 TYP.

0.8

+0.08

–0.05

°C

1 2

8.5 MAX.

3.2 ±0.2

2.3 TYP.

0.55

+0.08

–0.05

1. Emitter

2. Collector

3. Base

2.8 MAX.

1.2 TYP.

1984

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2sc2690 Summary of contents

Page 1

... These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES • Suitable for use in driver stage 100 W audio amplifiers and output stage of TV vertical deflection circuit. • High voltage and high 120 V (2SC2690) / 160 V (2SC2690A) CEO f = 175 MHz ( • ...

Page 2

... 0.3 A FE2 1 0.2 A CE(sat BE(sat 5 0 1.0 MHz 100 to 200 160 to 320 = 0.3 A Data Sheet D17501EJ2V0DS 2SC2690,2690A MIN. TYP. MAX. UNIT µ 1.0 A µ 1 150 60 140 320 0.4 0.7 V 1.0 1.3 V 175 MHz 26 pF ...

Page 3

... TYPICAL CHARACTERISTICS ( 25°C) Data Sheet D17501EJ2V0DS 2SC2690,2690A 3 ...

Page 4

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SC2690,2690A Not all M8E 02. 11-1 ...

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