2sc2712gt1 ON Semiconductor, 2sc2712gt1 Datasheet

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2sc2712gt1

Manufacturer Part Number
2sc2712gt1
Description
Medium Frequency Npn Transistor Amplifier Transistor
Manufacturer
ON Semiconductor
Datasheet
1.2SC2712GT1.pdf (3 pages)
2SC2712GT1G
Medium Frequency
NPN Amplifier Transistor
50 V, 200 mA, 80 MHz
applications such as wireless toys. The targeted design enables
improved performance versus the industry standard MMBT3904* in
some key parametric specifications.
Features
•
•
•
•
•
Benefits
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Specifications compared to MMBT3904.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
THERMAL CHARACTERISTICS
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
The 2SC2712GT1G is designed for low to medium frequency
Lower V
Higher Gain (h
Higher Breakdown Voltage Rating*
Moisture Sensitivity Level: 1
This is a Pb−Free Device
Longer Battery Life
Improved Performance Through Targeted Design
CE(sat)
Characteristic
Rating
*
fe
)*
(T
A
= 25°C)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
I
T
C(P)
P
T
I
I
stg
C
B
D
J
−55 to +150
Value
Max
150
200
200
150
5.0
60
50
30
1
mAdc
mAdc
mAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
°C
†For information on tape and reel specifications,
2SC2712GT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
SCG = Specific Date Code
M
ORDERING INFORMATION
2
BASE
= Date Code
MARKING DIAGRAMS
2
http://onsemi.com
1
COLLECTOR
(Pb−Free)
3
Package
SC−59
SCG M
3
Publication Order Number:
CASE 318D
STYLE 1
SC−59
EMITTER
3000/Tape & Reel
1
2SC2712GT1/D
Shipping
†

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2sc2712gt1 Summary of contents

Page 1

... Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications. Features • Lower V * CE(sat) • ...

Page 2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Collector−Emitter Breakdown Voltage (I = 2.0 mAdc Collector−Base Breakdown Voltage ( mAdc Emitter−Base Breakdown Voltage ( ...

Page 3

... D 0.35 0.50 0.0138 0.0196 G 1.70 2.10 0.0670 0.0826 H 0.013 0.100 0.0005 0.0040 J 0.09 0.18 0.0034 0.0070 K 0.20 0.60 0.0079 0.0236 L 1.25 1.65 0.0493 0.0649 S 2.50 3.00 0.0985 0.1181 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2SC2712GT1/D ...

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