2sc2545ftz-e Renesas Electronics Corporation., 2sc2545ftz-e Datasheet - Page 2
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2sc2545ftz-e
Manufacturer Part Number
2sc2545ftz-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC2545FTZ-E.pdf
(6 pages)
2SC2545, 2SC2546, 2SC2547
Electrical Characteristics
Collector to base breakdown
voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Noise voltage referred input
Note:
2SC2545
2SC2547
Rev.3.00 Aug 10, 2005 page 2 of 5
1. The 2SC2545 and 2SC2547 are grouped by h
Item
—
250 to 500
Symbol
V
V
V
V
h
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
I
V
CE(sat)
D
FE
CBO
EBO
e
f
BE
T
n
*
1
Min
250
60
60
—
—
—
—
—
—
—
400 to 800
400 to 800
5
2SC2545
Typ
3.0
0.6
0.5
E
—
—
—
—
—
—
—
90
1200 600
Max
0.1
0.1
0.2
—
—
—
—
—
—
—
600 to 1200
—
Min
90
90
—
—
—
—
—
—
—
5
F
FE
2SC2546
as follows.
Typ
0.6
3.0
0.5
90
—
—
—
—
—
—
—
1200 250
Max
0.1
0.1
0.2
—
—
—
—
—
—
—
Min
120
120
—
—
—
—
—
—
—
5
2SC2547
Typ
3.0
0.6
0.5
—
—
—
—
—
—
—
90
Max
800
0.1
0.1
0.2
—
—
—
—
—
—
—
MHz
Unit
nV/
pF
V
V
V
V
V
Hz
A
A
I
I
R
I
V
V
V
I
I
I
V
I
V
I
V
f = 1 MHz
V
I
f = 1 kHz,
R
C
C
E
C
C
B
C
C
C
CB
EB
CE
CE
CE
CB
CE
BE
g
= 10 A, I
= 1 mA,
= 10 A, I
= 2 mA
= 10 mA,
= 1 mA
= 2 mA
= 2 mA
= 10 mA,
= 0, f = 1Hz
= 50 V, I
= 2 V, I
= 12 V,
= 12 V,
= 12 V,
= 10 V, I
= 6V,
=
Test conditions
C
C
E
E
E
(Ta = 25°C)
= 0
= 0
= 0
= 0
= 0,