2sc2854 Renesas Electronics Corporation., 2sc2854 Datasheet - Page 2

• Manufacturer Part Number: 2sc2854
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC2853, 2SC2854
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance Cob
Notes: 1. The 2SC2853 and 2SC2854 are grouped by h
D
250 to 500
See characteristic curves of 2SC2855 and 2SC2856.
2
2. Pulse test
E
400 to 800
Symbol Min
V
V
V
I
I
h
V
V
f
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
*
1
2SC2853
90
90
5
—
—
250
—
—
—
—
Symbol
V
V
V
I
I
P
Tj
Tstg
C
E
CBO
CEO
EBO
C
Typ Max Min
—
—
—
—
—
—
0.05 0.10 —
0.7
310
3
—
—
—
0.1
0.1
800
1.0
—
—
FE
2SC2854
120
120
5
—
—
250
—
—
—
2SC2853
90
90
5
100
–100
400
150
–55 to +150
as follows.
Typ
—
—
—
—
—
—
0.05 0.10 V
0.7
310
3
Max Unit Test conditions
—
—
—
0.1
0.1
800
1.0
—
—
2SC2854
120
120
5
100
–100
400
150
–55 to +150
V
V
V
V
MHz V
pF
A
A
I
I
I
V
V
V
I
V
f = 1 MHz
C
C
E
C
CB
EB
CE
CE
CB
= 10 A, I
= 10 A, I
= 1 mA, R
= 10 mA, I
= 70 V, I
= 2 V, I
= 12 V, I
= 6 V, I
= 10 V, I
Unit
V
V
V
mA
mA
mW
C
C
C
C
C
E
E
C
E
BE
= 0
= 10 mA
B
= 0
= 0
= 0
= 0,
= 2 mA*
= 1 mA*
=
2
2