Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 3) @T
Thermal Resistance, Junction to Ambient (Note 3) @T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
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Notes:
DS31297 Rev. 4 - 2
Epitaxial Die Construction
Ultra-Small Leadless Surface Mount Package
Ultra Low Profile (0.4mm max)
Complementary PNP Type Available (BC857BLP4)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0008 grams
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at
4. Short duration pulse test used to minimize self-heating effect.
http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic (Note 4)
Characteristic
Characteristic
A
@T
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25°C
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V
V
V
Symbol
V
V
V
1 of 3
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
C
BE(SAT)
BE(ON)
I
h
CBO
CBO
f
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
FE
T
T
Symbol
Symbol
3
J
BOTTOM VIEW
V
V
V
R
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, T
P
CBO
CEO
EBO
I
θ JA
C
D
Min
200
580
100
STG
50
45
—
—
—
—
—
—
—
6
1
Typ
350
200
700
900
640
725
3.0
80
—
—
—
—
—
—
2
DFN1006H4-3
Max
450
250
600
700
770
-55 to +150
5.0
15
—
—
—
—
—
—
—
Value
Value
100
250
500
6.0
50
45
BC847BLP4
BC847BLP4
MHz
Unit
mV
mV
mV
nA
µA
pF
—
V
V
V
(Internal Schematic)
3
C
TOP VIEW
Test Condition
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
= 1μA, I
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
C
© Diodes Incorporated
B
E
°C/W
B
B
= 0
B
B
Unit
Unit
mW
mA
C
C
C
A
C
°C
= 0
B
B
V
V
V
= 0
= 0.5mA
= 0.5mA
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
BC847BLP4
= 5.0mA
= 5.0mA
2
1
