bc847bpdw1t1 ON Semiconductor, bc847bpdw1t1 Datasheet - Page 8

• Manufacturer Part Number: bc847bpdw1t1
• Description: Dual General Purpose Transistors Npn/pnp Duals Complementary
• Manufacturer: ON Semiconductor

−200
−100
−5.0
−2.0
−50
−10
0.001
0.01
1.0
0.1
−1.0
0
Figure 26. Active Region Safe Operating Area
0.02
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (V)
−5.0
T
1.0
A
= 25°C
−10
T
BC558
BC557
BC556
J
1 s
= 25°C
10
−30 −45 −65 −100
3 ms
Figure 25. Thermal Response
http://onsemi.com
100
8
t, TIME (ms)
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
or T
curves are valid for duty cycles to 10% provided T
≤ 150°C. T
25. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
P
(pk)
The data of Figure 26 is based upon T
DUTY CYCLE, D = t
The safe operating area curves indicate I
A
is variable depending upon conditions. Pulse
1.0 k
t
1
J(pk)
t
2
may be calculated from the data in Figure
1
/t
2
10 k
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJA
J(pk)
qJA
(t) = r(t) R
= 328°C/W MAX
− T
C
= P
J(pk)
100 k
qJA
(pk)
1
= 150°C; T
C
R
qJC
−V
(t)
CE
J(pk)
lim-
1.0 M
C