bc847bdw1t1 ON Semiconductor, bc847bdw1t1 Datasheet - Page 5

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bc847bdw1t1

Manufacturer Part Number
bc847bdw1t1
Description
Dual General Purpose Transistors
Manufacturer
ON Semiconductor
Datasheet

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-200
-100
-5.0
-2.0
-50
-10
0.001
0.01
1.0
0.1
-1.0
0
Figure 14. Active Region Safe Operating Area
0.02
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR-EMITTER VOLTAGE (V)
-5.0
T
1.0
A
= 25°C
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
-10
T
BC558
BC557
BC556
J
1 s
= 25°C
10
-30 -45 -65 -100
Figure 13. Thermal Response
3 ms
http://onsemi.com
t, TIME (ms)
100
5
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
or T
curves are valid for duty cycles to 10% provided T
150°C. T
Figure 13. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
P
(pk)
The safe operating area curves indicate I
The data of Figure 14 is based upon T
DUTY CYCLE, D = t
A
is variable depending upon conditions. Pulse
1.0 k
t
1
J(pk)
t
2
may be calculated from the data in
1
/t
2
10 k
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJA
J(pk)
qJA
(t) = r(t) R
= 3285C/W MAX
- T
C
= P
qJA
(pk)
J(pk)
100 k
1
R
qJC
C
= 150°C; T
(t)
-V
CE
J(pk)
limits
1.0 M
C

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